Transistors

Cost): 0.8pF. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. BE diode: no. CE diode: no

Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 800 MHz. Function: FM-V/M/O. Max hFE gain: 198. Minimum hFE gain: 40. Collector current: 20mA. Marking on the case: 15.8k Ohms. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 40V. Collector/emitter voltage Vceo: 30 v. Vebo: 4 v. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: hFE 20...90. Collector current: 3A. Note: T32. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 120V. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no

Cost): 0.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 11 MHz. Function: S-L. Collector current: 10A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 210V. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no

Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 100A. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: 60T65PES. Number of terminals: 3. Pd (Power Dissipation, Max): 535W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 142ns. Td(on): 45 ns. Technology: High Speed Fieldstop Trench IGBT, Second Generation. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 650V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6V. CE diode: yes. Germanium diode: no

Channel type: N. Type of transistor: FET. Function: 0505-111646. ID (T=25°C): 1.4A. Idss (max): 1.4A. Assembly/installation: surface-mounted component (SMD). Technology: SMD 5p.. Voltage Vds(max): 30 v. Quantity per case: 1. Note: screen printing/SMD code QU

Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no

Cost): 0.55pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 7.5. Minimum hFE gain: 5.5. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.25us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 1500V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no

Cost): 4pF. Semiconductor material: silicon. FT: kHz. Function: FAST-SWITCH. Max hFE gain: 7. Minimum hFE gain: 4.5. Collector current: 12A. Ic(pulse): 18A. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 2.6us. Tf(min): 0.2us. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-FX. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 700V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Semiconductor material: silicon. Function: FAST-SWITCH. Max hFE gain: 18. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 16A. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.3us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 700V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1. Spec info: ICM--16A (tp=5ms). Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no

Type of transistor: NPN transistor. Polarity: NPN. Quantity per case: 2. Collector-Emitter Voltage VCEO: 50V. Collector current: 0.8A. Power: 0.46W. Housing: TO-78

Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Collector current: 14A. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no

C(in): 1700pF. Cost): 184pF. Channel type: N. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 38 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no

C(in): 1650pF. Cost): 180pF. Channel type: N. Trr Diode (Min.): 355 ns. Type of transistor: MOSFET. Id(imp): 48A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49.6W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 132 ns. Td(on): 27 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no

C(in): 780pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 272 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 28nC, Low Crss 24pF. Id(imp): 36A. ID (T=100°C): 5.5A. ID (T=25°C): 9A. Idss (max): 9A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.72 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 18 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: +55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. G-S Protection: no

C(in): 1160pF. Cost): 134pF. Channel type: N. Trr Diode (Min.): 360ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 1uA. IDss (min): 1uA. Marking on the case: MDF9N60. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.65 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 31 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no

Cost): 2.5pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 400. Minimum hFE gain: 40. Collector current: 20A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 175W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 650V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 450V. Vebo: 8V. Spec info: Q1 BE 100 Ohms, Q2 BE 15 Ohms. BE diode: no. CE diode: no

Cost): 4pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 25. Collector current: 50A. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Type of transistor: NPN. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no

Cost): 7pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 75...1000. Collector current: 60A. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Type of transistor: NPN. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11015G. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 30A. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C. Cutoff frequency ft [MHz]: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) MJ11016

ROHS: Yes. Housing: TO3. Power: 200W. Assembly/installation: THT. Transistor type: Darlington transistor. Polarity: bipolar. Voltage (collector - emitter): 120V. Collector current Ic [A]: 30A

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 4pF. Cost): TO-204AA. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Minimum hFE gain: 1000. Collector current: 30A. Ic(pulse): +200°C. Note: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) MJ11015. BE diode: no. CE diode: no

Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Collector-Emitter Voltage VCEO: -60V. Collector current: -50A. Power: 300W

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Collector current: 50A. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 120V. Spec info: complementary transistor (pair) MJ11033

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11032G. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 50A. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C