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Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...9899100 101102...128
Quantity in stock : 4
KSC945-G

KSC945-G

Pinout: 1. C(in): 1.5pF. Cost): 11pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300...
KSC945-G
Pinout: 1. C(in): 1.5pF. Cost): 11pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 150mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) KSA733. BE diode: no. CE diode: no
KSC945-G
Pinout: 1. C(in): 1.5pF. Cost): 11pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 150mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) KSA733. BE diode: no. CE diode: no
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 146
KSC945-Y

KSC945-Y

Pinout: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 240. Mi...
KSC945-Y
Pinout: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 150mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) KSA733. BE diode: no. CE diode: no
KSC945-Y
Pinout: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 150mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) KSA733. BE diode: no. CE diode: no
Set of 1
0.36$ VAT incl.
(0.36$ excl. VAT)
0.36$
Quantity in stock : 59
KSD2012GTU

KSD2012GTU

Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Mi...
KSD2012GTU
Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Collector current: 3A. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no
KSD2012GTU
Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Collector current: 3A. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no
Set of 1
1.83$ VAT incl.
(1.83$ excl. VAT)
1.83$
Quantity in stock : 47
KSD5072

KSD5072

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 5A...
KSD5072
Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PML. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: Rbe 50 Ohms. Housing: TO-3PF (SOT399, 2-16E3A)
KSD5072
Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PML. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: Rbe 50 Ohms. Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
2.03$ VAT incl.
(2.03$ excl. VAT)
2.03$
Quantity in stock : 44
KSD5703

KSD5703

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltag...
KSD5703
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: 0.1...0.3us. Housing: TO-3PF (SOT399, 2-16E3A)
KSD5703
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: 0.1...0.3us. Housing: TO-3PF (SOT399, 2-16E3A)
Set of 1
3.55$ VAT incl.
(3.55$ excl. VAT)
3.55$
Quantity in stock : 25
KSD73-Y

KSD73-Y

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: ...
KSD73-Y
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 5A. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Spec info: 12149-401-070
KSD73-Y
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 5A. Pd (Power Dissipation, Max): 30W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Spec info: 12149-401-070
Set of 1
1.29$ VAT incl.
(1.29$ excl. VAT)
1.29$
Quantity in stock : 54
KSD882-Y

KSD882-Y

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Collector current: ...
KSD882-Y
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Spec info: SD882-Y
KSD882-Y
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Spec info: SD882-Y
Set of 1
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$
Quantity in stock : 11
KSE13009F

KSE13009F

Cost): 180pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: 'High Volt...
KSE13009F
Cost): 180pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: 'High Voltage Switch Mode'. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 12A. Ic(pulse): 24A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
KSE13009F
Cost): 180pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: 'High Voltage Switch Mode'. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 12A. Ic(pulse): 24A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.7us. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
2.06$ VAT incl.
(2.06$ excl. VAT)
2.06$
Quantity in stock : 4
KSE800

KSE800

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Collector curren...
KSE800
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Collector current: 4A. Note: b>750. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. Spec info: 0503-000001
KSE800
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Collector current: 4A. Note: b>750. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. Spec info: 0503-000001
Set of 1
1.68$ VAT incl.
(1.68$ excl. VAT)
1.68$
Quantity in stock : 250
KSP2222A

KSP2222A

Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. M...
KSP2222A
Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
KSP2222A
Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$
Quantity in stock : 64
KSP2907AC

KSP2907AC

Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. ...
KSP2907AC
Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 75. Collector current: 0.6A. Note: pinout E, C, B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. Vebo: 5V
KSP2907AC
Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 75. Collector current: 0.6A. Note: pinout E, C, B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. Vebo: 5V
Set of 5
0.83$ VAT incl.
(0.83$ excl. VAT)
0.83$
Quantity in stock : 201
KSP92TA

KSP92TA

Cost): 6pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 M...
KSP92TA
Cost): 6pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 500mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: PNP Epitaxial Silicon Transistor. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. BE diode: no. CE diode: no
KSP92TA
Cost): 6pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 500mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: PNP Epitaxial Silicon Transistor. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. BE diode: no. CE diode: no
Set of 10
1.38$ VAT incl.
(1.38$ excl. VAT)
1.38$
Quantity in stock : 4
KSR1002

KSR1002

Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 100mA. Marki...
KSR1002
Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 100mA. Marking on the case: R1002. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Collector/emitter voltage Vceo: 50V
KSR1002
Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 100mA. Marking on the case: R1002. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Collector/emitter voltage Vceo: 50V
Set of 1
0.94$ VAT incl.
(0.94$ excl. VAT)
0.94$
Quantity in stock : 18
KSR1003

KSR1003

Resistor B: 22k Ohms. BE resistor: 22k Ohms. Cost): 100pF. Quantity per case: 1. Semiconductor mater...
KSR1003
Resistor B: 22k Ohms. BE resistor: 22k Ohms. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: SW. Collector current: 0.1A. Marking on the case: R1003. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. BE diode: no. CE diode: no
KSR1003
Resistor B: 22k Ohms. BE resistor: 22k Ohms. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: SW. Collector current: 0.1A. Marking on the case: R1003. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. BE diode: no. CE diode: no
Set of 1
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Quantity in stock : 40
KSR1007

KSR1007

Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 100mA. Marki...
KSR1007
Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 100mA. Marking on the case: R1007. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no
KSR1007
Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 100mA. Marking on the case: R1007. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no
Set of 1
0.62$ VAT incl.
(0.62$ excl. VAT)
0.62$
Quantity in stock : 9
KSR1009

KSR1009

Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of...
KSR1009
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no
KSR1009
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no
Set of 1
0.81$ VAT incl.
(0.81$ excl. VAT)
0.81$
Out of stock
KSR1010

KSR1010

Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of...
KSR1010
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no
KSR1010
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no
Set of 1
2.16$ VAT incl.
(2.16$ excl. VAT)
2.16$
Out of stock
KSR1012

KSR1012

Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Note: 0...
KSR1012
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Note: 0.3W. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no
KSR1012
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Note: 0.3W. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no
Set of 1
2.37$ VAT incl.
(2.37$ excl. VAT)
2.37$
Quantity in stock : 2
KSR2001

KSR2001

Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of...
KSR2001
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Spec info: 0504-000142. BE diode: no. CE diode: no
KSR2001
Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Spec info: 0504-000142. BE diode: no. CE diode: no
Set of 1
0.96$ VAT incl.
(0.96$ excl. VAT)
0.96$
Quantity in stock : 18
KSR2004

KSR2004

Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 0.1A. Number...
KSR2004
Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 0.1A. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no
KSR2004
Quantity per case: 1. Semiconductor material: silicon. Function: SW. Collector current: 0.1A. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no
Set of 1
1.13$ VAT incl.
(1.13$ excl. VAT)
1.13$
Quantity in stock : 89
KSR2007

KSR2007

Resistor B: 47. BE resistor: 47. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon...
KSR2007
Resistor B: 47. BE resistor: 47. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Spec info: 12159-301-810. BE diode: no. CE diode: no
KSR2007
Resistor B: 47. BE resistor: 47. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. Function: S. Collector current: 0.1A. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Spec info: 12159-301-810. BE diode: no. CE diode: no
Set of 1
1.07$ VAT incl.
(1.07$ excl. VAT)
1.07$
Quantity in stock : 27
KTA1266Y

KTA1266Y

Resistor B: 10. BE resistor: 10. Cost): 3.7pF. Quantity per case: 1. Semiconductor material: silicon...
KTA1266Y
Resistor B: 10. BE resistor: 10. Cost): 3.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: SWITCHING APPLICATION. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
KTA1266Y
Resistor B: 10. BE resistor: 10. Cost): 3.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: SWITCHING APPLICATION. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
5.00$ VAT incl.
(5.00$ excl. VAT)
5.00$
Quantity in stock : 3
KTA1657

KTA1657

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: insulated package transi...
KTA1657
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: insulated package transistor. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V
KTA1657
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: insulated package transistor. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP. Collector/emitter voltage Vceo: 150V
Set of 1
2.66$ VAT incl.
(2.66$ excl. VAT)
2.66$
Quantity in stock : 37
KTA1663

KTA1663

Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: general p...
KTA1663
Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 100. Collector current: 1.5A. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar PNP Transistor'. Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. BE diode: no. CE diode: no
KTA1663
Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 100. Collector current: 1.5A. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar PNP Transistor'. Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 19
KTB778

KTB778

Cost): 280pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor...
KTB778
Cost): 280pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: High Power Audio Amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Collector current: 10A. Marking on the case: B778. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3P ( H ) IS. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) KTD998. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
KTB778
Cost): 280pF. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: High Power Audio Amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Collector current: 10A. Marking on the case: B778. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3P ( H ) IS. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) KTD998. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
2.40$ VAT incl.
(2.40$ excl. VAT)
2.40$
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