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Semiconductors Transistors

MD2001FX

MD2001FX
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 4.93$ 4.93$
5 - 9 4.69$ 4.69$
10 - 17 4.44$ 4.44$
Quantity U.P
1 - 4 4.93$ 4.93$
5 - 9 4.69$ 4.69$
10 - 17 4.44$ 4.44$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 17
Set of 1

MD2001FX. Cost): 4pF. Semiconductor material: silicon. FT: kHz. Function: FAST-SWITCH. Max hFE gain: 7. Minimum hFE gain: 4.5. Collector current: 12A. Ic(pulse): 18A. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 2.6us. Tf(min): 0.2us. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-FX. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 700V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 59
MD2310FX

MD2310FX

Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST...
MD2310FX
Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Collector current: 14A. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
MD2310FX
Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Collector current: 14A. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
3.16$ VAT incl.
(3.16$ excl. VAT)
3.16$
Quantity in stock : 1055
2SC5449

2SC5449

Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Horizontal Deflection Outp...
2SC5449
Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Horizontal Deflection Output. Max hFE gain: 30. Minimum hFE gain: 10. Collector current: 12A. Ic(pulse): 24A. Marking on the case: C5449. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Tf(max): 0.2us. Tf(min): 0.15us. Housing: TO-3PFM ( 13-16A1A ). Housing (according to data sheet): TO-3PFM. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 700V. Vebo: 6V. Spec info: High Speed ​​Switching
2SC5449
Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Horizontal Deflection Output. Max hFE gain: 30. Minimum hFE gain: 10. Collector current: 12A. Ic(pulse): 24A. Marking on the case: C5449. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Tf(max): 0.2us. Tf(min): 0.15us. Housing: TO-3PFM ( 13-16A1A ). Housing (according to data sheet): TO-3PFM. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 700V. Vebo: 6V. Spec info: High Speed ​​Switching
Set of 1
3.14$ VAT incl.
(3.14$ excl. VAT)
3.14$

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BD243CG

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Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Col...
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2SC2238

2SC2238

Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): ...
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FJP13007H1

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Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max...
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Quantity in stock : 8
2SC5411-TOS

2SC5411-TOS

Cost): 190pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: HA, Hi-res...
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Quantity in stock : 249
2SC5200

2SC5200

Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Pow...
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