Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 8.73$ | 8.73$ |
2 - 2 | 8.29$ | 8.29$ |
3 - 4 | 7.85$ | 7.85$ |
5 - 9 | 7.42$ | 7.42$ |
10 - 19 | 7.24$ | 7.24$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 8.73$ | 8.73$ |
2 - 2 | 8.29$ | 8.29$ |
3 - 4 | 7.85$ | 7.85$ |
5 - 9 | 7.42$ | 7.42$ |
10 - 19 | 7.24$ | 7.24$ |
MBQ60T65PES. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 100A. Ic(pulse): 180A. Ic(T=100°C): 60A. Marking on the case: 60T65PES. Number of terminals: 3. Pd (Power Dissipation, Max): 535W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 142ns. Td(on): 45 ns. Technology: High Speed Fieldstop Trench IGBT, Second Generation. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 650V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6V. CE diode: yes. Germanium diode: no. Quantity in stock updated on 15/01/2025, 14:25.
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