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Semiconductors Transistors

MDF11N60TH

MDF11N60TH
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 4.04$ 4.04$
5 - 9 3.84$ 3.84$
10 - 24 3.64$ 3.64$
25 - 28 3.43$ 3.43$
Quantity U.P
1 - 4 4.04$ 4.04$
5 - 9 3.84$ 3.84$
10 - 24 3.64$ 3.64$
25 - 28 3.43$ 3.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 28
Set of 1

MDF11N60TH. C(in): 1700pF. Cost): 184pF. Channel type: N. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 38 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 28
MDF11N60TH

MDF11N60TH

C(in): 1700pF. Cost): 184pF. Channel type: N. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. ...
MDF11N60TH
C(in): 1700pF. Cost): 184pF. Channel type: N. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 38 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no
MDF11N60TH
C(in): 1700pF. Cost): 184pF. Channel type: N. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 38 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no
Set of 1
4.04$ VAT incl.
(4.04$ excl. VAT)
4.04$

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