Transistors

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: MOS-N-FET. ID (T=100°C): 1.4A. ID (T=25°C): 2.7A. Idss (max): 2.7A. Number of terminals: 3. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 200V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 5A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Spec info: 0.3us

Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70MHz. Collector current: 500mA. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 50V. Vebo: 7V. BE diode: no. CE diode: no

RoHS: no. Housing: PCB soldering. Housing: TO-39. Housing (JEDEC standard): TO-39. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N1893. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 70 MHz. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: NPN transistor

Quantity per case: 1. Semiconductor material: GE. FT: 8 MHz. Function: S-L. Max hFE gain: 140. Minimum hFE gain: 60. Collector current: 5A. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Vcbo: 100V. Collector/emitter voltage Vceo: 100V

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 25pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 0.8A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2222A. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: NPN transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Tf(max): 60 ns. Tf(min): 60 ns. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Operating temperature: -60...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 40V. Vebo: 6V

C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.8A. Note: complementary transistor (pair) 2N2907A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2222A. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN transistor

Conditioning unit: 5000. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: Amplifier Transistor. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.6A. Marking on the case: 2N2222A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 25 ns. Housing: TO-92. Housing (according to data sheet): TO-92 ( BULK Pack ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 40V. Vebo: 6V

Resistor B: yes. BE diode: NPN transistor. BE resistor: PCB soldering. C(in): TO-18. Cost): TO-18. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 500 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Collector current: 0.2A. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. Assembly/installation: PCB through-hole mounting. Tf(max): 15 ns. Tf(min): 15 ns. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Operating temperature: -60...+200°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 40V

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 20. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Tf(max): 200 ns. Tf(min): 175 ns. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-39. Housing (JEDEC standard): TO-39. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2905A. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.6W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: PNP transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: amplifier, switching transistor. Max hFE gain: 300. Minimum hFE gain: 75. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Collector current: 0.6A. Note: >40. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP. Vcbo: 60V. Collector/emitter voltage Vceo: 40V

RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2907A. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.4W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: PNP transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 400mW. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 30 ns. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: VHF Amplifier

C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Hfe 100. Max hFE gain: 300. Minimum hFE gain: 75. Collector current: 0.6A. Ic(pulse): 0.8A. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Type of transistor: PNP. Vcbo: 60V. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-39. Housing (JEDEC standard): TO-39. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3019. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: NPN transistor. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Vcbo: 140V. Maximum saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 80V. Vebo: 7V

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 1A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 80V. Vebo: 7V

Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 60V. Collector current: 15A. Power: 115W. Housing: TO-3

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3055G. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 2.5 MHz. Maximum dissipation Ptot [W]: 115W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor