Transistors

Cost): 300pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Collector current: 50A. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 120V. Spec info: complementary transistor (pair) MJ11032

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11033G. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 50A. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15003G. Collector-emitter voltage Uceo [V]: 140V. Collector current Ic [A], max.: 20A. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 250W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 140V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15004

ROHS: Yes. Housing: TO3. Frequency: 3MHz. Assembly/installation: THT. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 140V. Collector current Ic [A]: 20A. Power: 250W

RoHS: yes. Resistor B: yes. BE resistor: 70. C(in): TO-3. Cost): TO-204AA. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: Power Transistor. Max hFE gain: 150. Minimum hFE gain: 25. Collector current: 20A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 140V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15003. BE diode: no. CE diode: no. Ic(pulse): 20A

BE resistor: 70. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 200V. Collector/emitter voltage Vceo: 120V. Spec info: Motorola. BE diode: no. CE diode: no

BE resistor: 70. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 120V. Vebo: 7V. Spec info: complementary transistor (pair) MJ15016. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15015G. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 6 MHz. Maximum dissipation Ptot [W]: 180W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

Cost): 360pF. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Vcbo: 200V. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 120V. Vebo: 7V. Spec info: complementary transistor (pair) MJ15015. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15016G. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 18 MHz. Maximum dissipation Ptot [W]: 180W. Component family: high voltage PNP transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Collector current: 16A. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15023. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 350V. Collector/emitter voltage Vceo: 200V

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 200V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15023. BE diode: no. CE diode: yes

BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Collector current: 16A. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15022. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Vcbo: 350V. Collector/emitter voltage Vceo: 200V

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 200V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15022. BE diode: no. CE diode: no

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15025. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15024G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

Cost): 280pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15024. BE diode: no. CE diode: no

Number of terminals: 3. Manufacturer's marking: MJ15025G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -250V. Collector current: -16A. Power: 250W. Max frequency: 4 MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ21193G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Component family: high voltage PNP transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ21194G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Type of transistor: PNP. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Spec info: complementary transistor (pair) MJ21196. BE diode: no. CE diode: no

Cost): 2pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Type of transistor: NPN. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Spec info: complementary transistor (pair) MJ21195. BE diode: no. CE diode: no

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Switching and Amplifier Applications. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) 2N3055. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ2955G. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 2.5 MHz. Maximum dissipation Ptot [W]: 115W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: PNP power transistor