MDF9N50TH

MDF9N50TH. C(in): 780pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 272 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 28nC, Low Crss 24pF. Id(imp): 36A. ID (T=100°C): 5.5A. ID (T=25°C): 9A. Idss (max): 9A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.72 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 18 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: +55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. G-S Protection: no. Quantity in stock updated on 12/01/2025, 02:25.