MJ11016G

Quantity	excl. VAT	VAT incl.
1 - 1	14.42$	14.42$
2 - 2	13.70$	13.70$
3 - 4	12.98$	12.98$
5 - 9	12.26$	12.26$
10 - 14	10.43$	10.43$
15 - 19	10.18$	10.18$
20 - 42	9.80$	9.80$

Quantity	U.P
1 - 1	14.42$	14.42$
2 - 2	13.70$	13.70$
3 - 4	12.98$	12.98$
5 - 9	12.26$	12.26$
10 - 14	10.43$	10.43$
15 - 19	10.18$	10.18$
20 - 42	9.80$	9.80$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 42

Set of 1

MJ11016G. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 4pF. Cost): TO-204AA. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Minimum hFE gain: 1000. Collector current: 30A. Ic(pulse): +200°C. Note: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) MJ11015. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 03:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!