MD2009DFX

Quantity	excl. VAT	VAT incl.
1 - 4	2.26$	2.26$
5 - 9	2.14$	2.14$
10 - 24	2.03$	2.03$
25 - 49	1.92$	1.92$
50 - 99	1.87$	1.87$
100 - 117	1.83$	1.83$

Quantity	U.P
1 - 4	2.26$	2.26$
5 - 9	2.14$	2.14$
10 - 24	2.03$	2.03$
25 - 49	1.92$	1.92$
50 - 99	1.87$	1.87$
100 - 117	1.83$	1.83$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 117

Set of 1

MD2009DFX. Semiconductor material: silicon. Function: FAST-SWITCH. Max hFE gain: 18. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 16A. Temperature: +150°C. Pd (Power Dissipation, Max): 58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.3us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 700V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1. Spec info: ICM--16A (tp=5ms). Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 06:25.

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Delivery in 2-3 days, with postal tracking!