Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 5.91$ | 5.91$ |
2 - 2 | 5.62$ | 5.62$ |
3 - 4 | 5.32$ | 5.32$ |
5 - 9 | 5.03$ | 5.03$ |
10 - 19 | 4.91$ | 4.91$ |
20 - 29 | 4.79$ | 4.79$ |
30+ | 4.61$ | 4.61$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 5.91$ | 5.91$ |
2 - 2 | 5.62$ | 5.62$ |
3 - 4 | 5.32$ | 5.32$ |
5 - 9 | 5.03$ | 5.03$ |
10 - 19 | 4.91$ | 4.91$ |
20 - 29 | 4.79$ | 4.79$ |
30+ | 4.61$ | 4.61$ |
MJ10005. Cost): 2.5pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 400. Minimum hFE gain: 40. Collector current: 20A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 175W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO–204AE ). Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 650V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 450V. Vebo: 8V. Spec info: Q1 BE 100 Ohms, Q2 BE 15 Ohms. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 14:25.
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