Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.27$ | 3.27$ |
5 - 9 | 3.11$ | 3.11$ |
10 - 24 | 2.94$ | 2.94$ |
25 - 49 | 2.78$ | 2.78$ |
50 - 65 | 2.62$ | 2.62$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.27$ | 3.27$ |
5 - 9 | 3.11$ | 3.11$ |
10 - 24 | 2.94$ | 2.94$ |
25 - 49 | 2.78$ | 2.78$ |
50 - 65 | 2.62$ | 2.62$ |
MDF11N65B. C(in): 1650pF. Cost): 180pF. Channel type: N. Trr Diode (Min.): 355 ns. Type of transistor: MOSFET. Id(imp): 48A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 1uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 49.6W. On-resistance Rds On: 0.45 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 132 ns. Td(on): 27 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/01/2025, 14:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.