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Semiconductors Transistors

MD1802FX

MD1802FX
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.92$ 2.92$
5 - 9 2.78$ 2.78$
10 - 24 2.63$ 2.63$
25 - 49 2.49$ 2.49$
50 - 98 2.43$ 2.43$
Quantity U.P
1 - 4 2.92$ 2.92$
5 - 9 2.78$ 2.78$
10 - 24 2.63$ 2.63$
25 - 49 2.49$ 2.49$
50 - 98 2.43$ 2.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 98
Set of 1

MD1802FX. Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 59
MD2310FX

MD2310FX

Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST...
MD2310FX
Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Collector current: 14A. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
MD2310FX
Cost): 1.6pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 64kHz. Function: FAST-SWITCH fh--64KHz (IC=6A). Production date: 2014/17. Max hFE gain: 8.5. Minimum hFE gain: 6. Collector current: 14A. Ic(pulse): 21A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.12us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no
Set of 1
3.16$ VAT incl.
(3.16$ excl. VAT)
3.16$

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