Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.60$ | 3.60$ |
5 - 8 | 3.42$ | 3.42$ |
Quantity | U.P | |
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1 - 4 | 3.60$ | 3.60$ |
5 - 8 | 3.42$ | 3.42$ |
MDF9N60TH. C(in): 1160pF. Cost): 134pF. Channel type: N. Trr Diode (Min.): 360ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 1uA. IDss (min): 1uA. Marking on the case: MDF9N60. Number of terminals: 3. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.65 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 31 ns. Technology: Cool Mos POWER transistor. Housing: TO-220FP. Housing (according to data sheet): TO220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Function: SMPS, high Speed switching. Spec info: Ultra Low Gate Charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/01/2025, 14:25.
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