Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.39$ | 2.39$ |
5 - 9 | 2.27$ | 2.27$ |
10 - 24 | 2.15$ | 2.15$ |
25 - 49 | 2.03$ | 2.03$ |
50 - 85 | 1.98$ | 1.98$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.39$ | 2.39$ |
5 - 9 | 2.27$ | 2.27$ |
10 - 24 | 2.15$ | 2.15$ |
25 - 49 | 2.03$ | 2.03$ |
50 - 85 | 1.98$ | 1.98$ |
MD1803DFX. Cost): 0.55pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 7.5. Minimum hFE gain: 5.5. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.25us. Tf(min): 0.25us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 1500V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 03:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.