Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 14.31$ | 14.31$ |
2 - 2 | 13.59$ | 13.59$ |
3 - 4 | 13.31$ | 13.31$ |
5 - 9 | 12.88$ | 12.88$ |
10 - 14 | 12.59$ | 12.59$ |
15 - 19 | 12.16$ | 12.16$ |
20+ | 11.73$ | 11.73$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 14.31$ | 14.31$ |
2 - 2 | 13.59$ | 13.59$ |
3 - 4 | 13.31$ | 13.31$ |
5 - 9 | 12.88$ | 12.88$ |
10 - 14 | 12.59$ | 12.59$ |
15 - 19 | 12.16$ | 12.16$ |
20+ | 11.73$ | 11.73$ |
NPN-Transistor, 30A, TO-3 ( TO-204 ), TO-3, 120V - MJ11015G. NPN-Transistor, 30A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 4 MHz. Function: hFE 1000 (IC=20Adc, VCE=5Vdc). Minimum hFE gain: 1000. Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJ11016. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 01/08/2025, 10:25.
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