Electronic components and equipment, for businesses and individuals
0
Product categories :
Audio
>
315
Automation
>
19
Cables
>
1775
Computer
>
58
Connectors
>
5692
Cooling
>
764
Electrical protection
>
1160
Enclosures for electronics
>
1218
Energy
>
1353
Leisure electronics
>
542
Mechanical parts
>
444
Optoelectronics
>
2023
Passive components
>
14497
Relays
>
872
Repairing
>
2245
Semiconductors
>
14629
Switches
>
953
Tools
>
1404
Transformers
>
565
Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...101102103 104105...128
Quantity in stock : 64
MJ802

MJ802

C(in): 30pF. Cost): 8.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Collect...
MJ802
C(in): 30pF. Cost): 8.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Collector current: 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no
MJ802
C(in): 30pF. Cost): 8.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Collector current: 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no
Set of 1
14.27$ VAT incl.
(14.27$ excl. VAT)
14.27$
Quantity in stock : 87
MJ802G

MJ802G

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration:...
MJ802G
RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ802G. Collector-emitter voltage Uceo [V]: 90V. Collector current Ic [A], max.: 30A. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor
MJ802G
RoHS: yes. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ802G. Collector-emitter voltage Uceo [V]: 90V. Collector current Ic [A], max.: 30A. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor
Set of 1
17.92$ VAT incl.
(17.92$ excl. VAT)
17.92$
Quantity in stock : 521
MJD42C1G

MJD42C1G

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collecto...
MJD42C1G
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -6A. Power: 20W. Max frequency: 3MHz. Housing: I-PAK
MJD42C1G
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -6A. Power: 20W. Max frequency: 3MHz. Housing: I-PAK
Set of 1
0.33$ VAT incl.
(0.33$ excl. VAT)
0.33$
Quantity in stock : 132
MJD44H11G

MJD44H11G

RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configura...
MJD44H11G
RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
MJD44H11G
RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
1.57$ VAT incl.
(1.57$ excl. VAT)
1.57$
Quantity in stock : 1188
MJD44H11RLG

MJD44H11RLG

RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configura...
MJD44H11RLG
RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
MJD44H11RLG
RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
1.63$ VAT incl.
(1.63$ excl. VAT)
1.63$
Quantity in stock : 122
MJD44H11T4G

MJD44H11T4G

Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complement...
MJD44H11T4G
Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 44H11G. Equivalents: MJD44H11G, MJD44H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no
MJD44H11T4G
Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 44H11G. Equivalents: MJD44H11G, MJD44H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no
Set of 1
1.08$ VAT incl.
(1.08$ excl. VAT)
1.08$
Quantity in stock : 46
MJD45H11G

MJD45H11G

RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configura...
MJD45H11G
RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J45H11. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 90 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
MJD45H11G
RoHS: yes. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J45H11. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 90 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
Set of 1
1.22$ VAT incl.
(1.22$ excl. VAT)
1.22$
Quantity in stock : 156
MJD45H11T4G

MJD45H11T4G

Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complement...
MJD45H11T4G
Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 45H11G. Equivalents: MJD45H11G, MJD45H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no
MJD45H11T4G
Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 45H11G. Equivalents: MJD45H11G, MJD45H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no
Set of 1
1.15$ VAT incl.
(1.15$ excl. VAT)
1.15$
Quantity in stock : 3
MJE13005

MJE13005

Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Collect...
MJE13005
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Collector current: 4A. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no
MJE13005
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Collector current: 4A. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$
Quantity in stock : 191
MJE13007

MJE13007

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching ...
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.83$ VAT incl.
(1.83$ excl. VAT)
1.83$
Quantity in stock : 129
MJE13007-CDIL

MJE13007-CDIL

Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching c...
MJE13007-CDIL
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007-CDIL
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.03$ VAT incl.
(1.03$ excl. VAT)
1.03$
Quantity in stock : 286
MJE13007G

MJE13007G

Manufacturer's marking: MJE13007G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A...
MJE13007G
Manufacturer's marking: MJE13007G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 80W. Type of transistor: Power Transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Power: 80W. Max frequency: 14 MHz. Housing: TO-220AB. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE13007G
Manufacturer's marking: MJE13007G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 80W. Type of transistor: Power Transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Power: 80W. Max frequency: 14 MHz. Housing: TO-220AB. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.81$ VAT incl.
(1.81$ excl. VAT)
1.81$
Quantity in stock : 12
MJE13009G

MJE13009G

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration:...
MJE13009G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE13009G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 12A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 100W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
MJE13009G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE13009G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 12A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 100W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
3.14$ VAT incl.
(3.14$ excl. VAT)
3.14$
Quantity in stock : 76
MJE15030

MJE15030

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Ma...
MJE15030
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031. BE diode: no. CE diode: no
MJE15030
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031. BE diode: no. CE diode: no
Set of 1
1.63$ VAT incl.
(1.63$ excl. VAT)
1.63$
Quantity in stock : 153
MJE15030G

MJE15030G

Collector current: 8A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Col...
MJE15030G
Collector current: 8A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 150V. Power: 50W. Max frequency: 30MHz. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031G
MJE15030G
Collector current: 8A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 150V. Power: 50W. Max frequency: 30MHz. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031G
Set of 1
2.21$ VAT incl.
(2.21$ excl. VAT)
2.21$
Quantity in stock : 77
MJE15031

MJE15031

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Ma...
MJE15031
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031. BE diode: no. CE diode: no
MJE15031
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15031. BE diode: no. CE diode: no
Set of 1
1.70$ VAT incl.
(1.70$ excl. VAT)
1.70$
Quantity in stock : 132
MJE15031G

MJE15031G

Housing: TO-220. Resistor B: Power Transistor. BE resistor: -150V. C(in): -8A. Cost): 50W. Condition...
MJE15031G
Housing: TO-220. Resistor B: Power Transistor. BE resistor: -150V. C(in): -8A. Cost): 50W. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15030G. BE diode: no. CE diode: no
MJE15031G
Housing: TO-220. Resistor B: Power Transistor. BE resistor: -150V. C(in): -8A. Cost): 50W. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15030G. BE diode: no. CE diode: no
Set of 1
2.24$ VAT incl.
(2.24$ excl. VAT)
2.24$
Quantity in stock : 25
MJE15032

MJE15032

Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 250V. Colle...
MJE15032
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Power: 50W. Max frequency: 30MHz. Housing: TO-220
MJE15032
Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Power: 50W. Max frequency: 30MHz. Housing: TO-220
Set of 1
1.51$ VAT incl.
(1.51$ excl. VAT)
1.51$
Quantity in stock : 574
MJE15032G

MJE15032G

Housing: TO-220. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Collec...
MJE15032G
Housing: TO-220. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Power: 50W. Max frequency: 30MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15033
MJE15032G
Housing: TO-220. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Power: 50W. Max frequency: 30MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15033
Set of 1
2.18$ VAT incl.
(2.18$ excl. VAT)
2.18$
Quantity in stock : 105
MJE15033

MJE15033

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -250V. Collecto...
MJE15033
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -250V. Collector current: -8A. Power: 50W. Max frequency: 30MHz. Housing: TO-220
MJE15033
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -250V. Collector current: -8A. Power: 50W. Max frequency: 30MHz. Housing: TO-220
Set of 1
1.41$ VAT incl.
(1.41$ excl. VAT)
1.41$
Quantity in stock : 425
MJE15033G

MJE15033G

RoHS: yes. Housing: TO-220. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220. Cost): 2pF. ...
MJE15033G
RoHS: yes. Housing: TO-220. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220. Cost): 2pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 50. Minimum hFE gain: 10. Collector current: 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15032. BE diode: no. CE diode: no
MJE15033G
RoHS: yes. Housing: TO-220. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220. Cost): 2pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 50. Minimum hFE gain: 10. Collector current: 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJE15032. BE diode: no. CE diode: no
Set of 1
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$
Quantity in stock : 82
MJE15034G

MJE15034G

Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (...
MJE15034G
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Collector current: 4A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Collector/emitter voltage Vceo: 350V. Spec info: complementary transistor (pair) MJE15035G. BE diode: no. CE diode: no
MJE15034G
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Collector current: 4A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Collector/emitter voltage Vceo: 350V. Spec info: complementary transistor (pair) MJE15035G. BE diode: no. CE diode: no
Set of 1
2.46$ VAT incl.
(2.46$ excl. VAT)
2.46$
Quantity in stock : 71
MJE15035G

MJE15035G

Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. ...
MJE15035G
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Collector current: 4A. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 350V. Vebo: 5V. Spec info: hFE=100 (Min) @ IC=0.5Adc. BE diode: no. CE diode: no
MJE15035G
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Collector current: 4A. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 350V. Vebo: 5V. Spec info: hFE=100 (Min) @ IC=0.5Adc. BE diode: no. CE diode: no
Set of 1
2.46$ VAT incl.
(2.46$ excl. VAT)
2.46$
Quantity in stock : 486
MJE18004

MJE18004

Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: Switching...
MJE18004
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 34. Minimum hFE gain: 12. Collector current: 5A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 400us. Tf(min): 70us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. BE diode: no. CE diode: no
MJE18004
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 34. Minimum hFE gain: 12. Collector current: 5A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 400us. Tf(min): 70us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. BE diode: no. CE diode: no
Set of 1
1.43$ VAT incl.
(1.43$ excl. VAT)
1.43$
Quantity in stock : 263
MJE18004G

MJE18004G

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration:...
MJE18004G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE18004G. Collector-emitter voltage Uceo [V]: 450V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
MJE18004G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE18004G. Collector-emitter voltage Uceo [V]: 450V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
1.96$ VAT incl.
(1.96$ excl. VAT)
1.96$
1...101102103 104105...128

Information and technical help

By phone :
By email
Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.