Transistors

Cost): 50pF. Semiconductor material: silicon. FT: 240 MHz. Max hFE gain: 300. Minimum hFE gain: 15. Collector current: 2A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 35V. Saturation voltage VCE(sat): 0.23V. Collector/emitter voltage Vceo: 25V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 30pF. Semiconductor material: silicon. FT: 175 MHz. Function: Very low saturation VBE(sat) 0.9V. Collector current: 2A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 1200 ns. Tf(min): 80 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.13V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) ZTX753. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 150 MHz. Collector current: 2A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. Function: hFE 500, Very low-sat VBE(sat) 0.9V. Quantity per case: 1. Spec info: complementary transistor (pair) ZTX790

Cost): 30pF. Semiconductor material: silicon. FT: 140 MHz. Function: Very low saturation VBE(sat) 0.9V. Collector current: 2A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 600 ns. Tf(min): 40 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.17V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) ZTX653. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: ZTX758. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 0.5A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C. Component family: PNP transistor

Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.9V. Max hFE gain: 800. Minimum hFE gain: 150. Collector current: 2A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 600 ns. Tf(min): 35us. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) ZTX690

Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 800. Minimum hFE gain: 300. Collector current: 2A. Ic(pulse): 4A. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 750 ns. Tf(min): 35us. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.45V. Collector/emitter voltage Vceo: 70V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Function: Very low saturation VBE(sat) 0.95V

Semiconductor material: silicon. FT: 130 MHz. Function: Very low saturation VBE(sat)0.92V. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 5A. Ic(pulse): 20A. Pd (Power Dissipation, Max): 1.58W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 1100 ns. Tf(min): 45 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+200°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 60V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: ZVN3306F. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.15A. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 5 ns. Switch-off delay tf[nsec.]: 6 ns. Ciss Gate Capacitance [pF]: 35pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. Function: Logic-Level. ID (T=25°C): 0.18A. Idss (max): 0.18A. Pd (Power Dissipation, Max): 0.7W. On-resistance Rds On: 10 Ohms. Assembly/installation: PCB through-hole mounting. Technology: ENHANCEMENT MODE VERTICAL DMOS FET. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. Quantity per case: 1

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: ZVP2110A. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -0.23A. Drain current through resistor Rds [Ohm] @ Ids [A]: 8 Ohms @ -0.375A. Gate breakdown voltage Ugs [V]: -3.5V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 100pF. Maximum dissipation Ptot [W]: 0.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: ZVP3306F. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -0.09A. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ -0.2A. Gate breakdown voltage Ugs [V]: -3.5V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 8 ns. Ciss Gate Capacitance [pF]: 50pF. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Drain-source voltage Uds [V]: -240V. Drain Current Id [A] @ 25°C: -0.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 11 Ohms @ -0.1A. Gate breakdown voltage Ugs [V]: -2.0V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 0.75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 298pF. Cost): 35pF. Channel type: N. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. IDss (min): 0uA. Pd (Power Dissipation, Max): 2W. On-resistance Rds On: 0.13 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 70V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no