Transistors

Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Collector current: 3A. Marking on the case: B1366-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon PNP Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) KSD2012. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Collector current: 1A. Pd (Power Dissipation, Max): 0.8W. Type of transistor: PNP. Collector/emitter voltage Vceo: 30 v. Spec info: SAMSUNG. CE diode: yes

Cost): 2.6pF. Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.7A. Pd (Power Dissipation, Max): 0.8W. Type of transistor: NPN. Vcbo: 160V. Collector/emitter voltage Vceo: 140V. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 140. Minimum hFE gain: 70. Collector current: 200mA. Marking on the case: C1507 O. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 300V. Vebo: 7V. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 200mA. Marking on the case: C1507 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 300V. Vebo: 7V. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. CE diode: yes

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI audio amplifier. Max hFE gain: 600. Minimum hFE gain: 300. Collector current: 50mA. Marking on the case: C1845. Equivalents: 2SC1845. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Maximum saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) KSA992. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Collector current: 0.7A. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. CE diode: yes

Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 60. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) KSA940. BE diode: no. CE diode: no

Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 40. Collector current: 1.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) KSA940. BE diode: no. CE diode: no

Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 140. Minimum hFE gain: 70. Collector current: 0.05A. Marking on the case: C2310 O. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. BE diode: no. CE diode: no

Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.05A. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. BE diode: no. CE diode: no

Resistor B: 10. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Collector current: 2A. Pd (Power Dissipation, Max): 1W. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Spec info: TO-92M (hauteur 9mm). BE diode: no. CE diode: no

Resistor B: 10. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: 0501-000367. Collector current: 0.1A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Spec info: 9mm height. BE diode: no. CE diode: no

Cost): 60pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 120...240. Collector current: 0.7A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92L ( SC-51 ) ( 9mm ). Type of transistor: NPN. Vcbo: 80V. Collector/emitter voltage Vceo: 60V

Cost): 60pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 3A. Ic(pulse): 10A. Marking on the case: KSC5027 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no

Cost): 60pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 3A. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.5us. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 800V. Vebo: 7V. BE diode: no. CE diode: yes

BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. Function: Dyn Focus. Collector current: 0.1A. Pd (Power Dissipation, Max): 4W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 900V. Spec info: HV switch. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes

BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 8A. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: yes

BE resistor: 10. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Switching 0.1us. Max hFE gain: 22. Minimum hFE gain: 8. Collector current: 7A. Ic(pulse): 16A. Marking on the case: C5386. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 4.2V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Spec info: VEBO 6V. Housing: TO-3PF (SOT399). BE diode: no. CE diode: yes

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA (F). Collector current: 10A. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Spec info: Monitor 68KHz. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no

Cost): 90pF. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA (F). Collector current: 10A. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Spec info: Rbe 50 Ohms, monitor 69kHz. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no

Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA (F). Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 12A. Ic(pulse): 24A. Marking on the case: C5803. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Spec info: For C-Monitor (85KHz). Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: no

Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: FM-V/M/O/IF. Collector current: 0.03A. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN. Collector/emitter voltage Vceo: 35V. Spec info: 12149301860. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: FM-V/M/O/IF. Collector current: 0.03A. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN. Collector/emitter voltage Vceo: 35V. Spec info: 62137301900

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Collector current: 0.05A. Note: hFE 350...700. Pd (Power Dissipation, Max): 0.25W. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Spec info: 0501-000394