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Semiconductors Transistors

KTC9018

KTC9018
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.61$ 0.61$
10 - 24 0.58$ 0.58$
25 - 49 0.55$ 0.55$
50 - 99 0.52$ 0.52$
100 - 178 0.51$ 0.51$
Quantity U.P
1 - 9 0.61$ 0.61$
10 - 24 0.58$ 0.58$
25 - 49 0.55$ 0.55$
50 - 99 0.52$ 0.52$
100 - 178 0.51$ 0.51$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 178
Set of 1

KTC9018. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 800 MHz. Function: FM-V/M/O. Max hFE gain: 198. Minimum hFE gain: 40. Collector current: 20mA. Marking on the case: 15.8k Ohms. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 40V. Collector/emitter voltage Vceo: 30 v. Vebo: 4 v. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 17802
BC546B

BC546B

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
BC546B
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
BC546B
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
Set of 1
0.06$ VAT incl.
(0.06$ excl. VAT)
0.06$
Quantity in stock : 7911
2N3904

2N3904

C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: si...
2N3904
C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no
2N3904
C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no
Set of 10
0.57$ VAT incl.
(0.57$ excl. VAT)
0.57$
Quantity in stock : 114
BC550B

BC550B

Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general ...
BC550B
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC560B. BE diode: no. CE diode: no
BC550B
Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC560B. BE diode: no. CE diode: no
Set of 10
1.36$ VAT incl.
(1.36$ excl. VAT)
1.36$

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Quantity in stock : 1012
BC560C

BC560C

Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380....
BC560C
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Quantity in stock : 527
BC550C

BC550C

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 420...800 (IC=2mAd...
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Quantity in stock : 41
BC560B

BC560B

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 200...450. Collect...
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Quantity in stock : 51
IRFP150

IRFP150

C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Qu...
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Quantity in stock : 108
CCAP10UF100V

CCAP10UF100V

Capacitance: 10uF. Diameter: 8mm. Lifespan: 1000 heures. Lenght: 11mm. Configuration: vertical mount...
CCAP10UF100V
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Quantity in stock : 2455
MF0204-1M10

MF0204-1M10

Resistance: 1.1M Ohms. Power: 0.4W. Tolerance: 1%. Series: MF0204. Dimensions: 3.2x1.6mm. Temperatur...
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Quantity in stock : 5
TDA7052

TDA7052

Number of terminals: 8. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. H...
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Quantity in stock : 63
ELC100UF35P-H

ELC100UF35P-H

DC voltage: 35V. Capacitance: 100uF. Diameter: 8mm. Lifespan: 2000 hours. Lenght: 12mm. Configuratio...
ELC100UF35P-H
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0.0821$ VAT incl.
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0.0821$

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