Transistors

C(in): 1100pF. Cost): 46pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 24A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 20uA. Marking on the case: 08N60C3. Pd (Power Dissipation, Max): 104W. On-resistance Rds On: 0.56 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 335pF. Cost): 105pF. Channel type: P. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Id(imp): 32.5A. ID (T=100°C): 6.2A. ID (T=25°C): 8.8A. Idss (max): 1uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Housing: TO-220. Housing (according to data sheet): PG-TO220-3. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Function: Enhancement mode, avalanche rated, dv/dt rated. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 10N10. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.17 Ohms @ 7.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 44 ns. Ciss Gate Capacitance [pF]: 426pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 11N60C3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.34 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool Mos POWER trafnsistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1460pF. Cost): 610pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 650ms. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 22A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: 11N60S5. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.34 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 130 ns. Technology: Cool Mos POWER transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. Pd (Power Dissipation, Max): 156W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Function: ID pulse 33A. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: SPP17N80C2. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.25 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Number of terminals: 3. Quantity per case: 1

C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.25 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 230pF. Cost): 95pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: dv/dt rated Enhancement mode. G-S Protection: diode. Id(imp): 74.8A. ID (T=100°C): 13.2A. ID (T=25°C): 18.7A. Idss (max): 10uA. IDss (min): 0.1uA. Marking on the case: 18P06P. Pd (Power Dissipation, Max): 81W. On-resistance Rds On: 0.102 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 12 ns. Technology: SIPMOS Power-Transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.7V. Number of terminals: 3. Quantity per case: 1

C(in): 2400pF. Cost): 780pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 62.1A. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 20N60C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: no

C(in): 3000pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 40A. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 20N60S5. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 120ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 4.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N06L11. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 80A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.015 Ohms @ 40A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 68 ns. Ciss Gate Capacitance [pF]: 2650pF. Maximum dissipation Ptot [W]: 158W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.85 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool Mos. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 156W. On-resistance Rds On: 0.39 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60C3. Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 20.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.19 Ohms @ 13.1A. Gate breakdown voltage Ugs [V]: 3.9V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 2400pF. Maximum dissipation Ptot [W]: 208W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 20A. Power: 208W. On-resistance Rds On: 0.19 Ohms. Housing: PG-TO247 HV. Drain-source voltage (Vds): 600V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ 8A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 540pF. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

Cost): 9pF. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 200. Minimum hFE gain: 120. Collector current: 1.5A. Marking on the case: S8050 C. Pd (Power Dissipation, Max): 1W. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo-Pack). Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 25V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no

C(in): 11pF. Cost): 1.5pF. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 160. Collector current: 1.5A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.28V. Collector/emitter voltage Vceo: 25V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

BE resistor: 4. Cost): 3pF. Semiconductor material: silicon. Function: Class B Push-pull Operation. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Spec info: excellent hFE linearity. BE diode: no. CE diode: no

Cost): 95pF. Semiconductor material: silicon. Function: Class B Push-pull Operation. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Spec info: excellent hFE linearity. BE diode: no. CE diode: yes

Cost): 28pF. Semiconductor material: silicon. Function: Class B Push-pull Operation. Max hFE gain: 135. Minimum hFE gain: 96. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.16V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 20V. Vebo: 5V. Quantity per case: 1. Spec info: excellent hFE linearity. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: general purpose. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.45W. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no

C(in): 1750pF. Cost): 190pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 440 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 36A. ID (T=100°C): 3.2A. ID (T=25°C): 5.1A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 20 ns. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no