Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.25$ | 0.25$ |
10 - 24 | 0.24$ | 0.24$ |
25 - 49 | 0.23$ | 0.23$ |
50 - 99 | 0.22$ | 0.22$ |
100 - 249 | 0.18$ | 0.18$ |
250 - 499 | 0.17$ | 0.17$ |
500 - 528 | 0.16$ | 0.16$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.25$ | 0.25$ |
10 - 24 | 0.24$ | 0.24$ |
25 - 49 | 0.23$ | 0.23$ |
50 - 99 | 0.22$ | 0.22$ |
100 - 249 | 0.18$ | 0.18$ |
250 - 499 | 0.17$ | 0.17$ |
500 - 528 | 0.16$ | 0.16$ |
SS8550. C(in): 11pF. Cost): 1.5pF. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 160. Collector current: 1.5A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.28V. Collector/emitter voltage Vceo: 25V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 12:25.
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