SPP08P06P

Quantity	excl. VAT	VAT incl.
1 - 4	2.61$	2.61$
5 - 9	2.48$	2.48$
10 - 24	2.35$	2.35$
25 - 49	2.22$	2.22$
50 - 99	2.17$	2.17$
100 - 249	2.12$	2.12$
250+	2.01$	2.01$

Quantity	U.P
1 - 4	2.61$	2.61$
5 - 9	2.48$	2.48$
10 - 24	2.35$	2.35$
25 - 49	2.22$	2.22$
50 - 99	2.17$	2.17$
100 - 249	2.12$	2.12$
250+	2.01$	2.01$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

SPP08P06P. C(in): 335pF. Cost): 105pF. Channel type: P. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Id(imp): 32.5A. ID (T=100°C): 6.2A. ID (T=25°C): 8.8A. Idss (max): 1uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Housing: TO-220. Housing (according to data sheet): PG-TO220-3. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Function: Enhancement mode, avalanche rated, dv/dt rated. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 06:25.

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Delivery in 2-3 days, with postal tracking!