Transistors

C(in): 790pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. ID (T=100°C): 8.2A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 13NM60N. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no

C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no

C(in): 485pF. Cost): 57pF. Channel type: N. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: F3NK80Z. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 3.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220FP. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: F5NK100Z. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 3.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3.7 Ohms @ 1.75A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 52 ns. Ciss Gate Capacitance [pF]: 1154pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 2115pF. Cost): 190pF. Channel type: N. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: F9NK90Z. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

C(in): 452pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 324 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. Id(imp): 26A. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 100mA. IDss (min): 1mA. Marking on the case: 9NM60N. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.63 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52.5 ns. Td(on): 28 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: ID pulse 26A. G-S Protection: no

C(in): 610pF. Cost): 65pF. Channel type: N. Trr Diode (Min.): 50 ns. Function: light dimmer, Static relay, Motor driver. Collector current: 20A. Ic(pulse): 100A. Ic(T=100°C): 7A. Marking on the case: GF10NB60SD. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 1.2 ns. Td(on): 0.7 ns. Technology: PowerMESH IGBT. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.35V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Spec info: Low on-voltage drop (VCE(sat)). CE diode: yes. Germanium diode: no

C(in): 380pF. Cost): 46pF. Channel type: N. Trr Diode (Min.): 35 ns. Function: High frequency motor controls. Collector current: 20A. Ic(pulse): 30A. Ic(T=100°C): 10A. Marking on the case: GP10NC60KD. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 17 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Spec info: Short-circuit withstand time 10us. CE diode: yes. Germanium diode: no

C(in): 2200pF. Cost): 225pF. Channel type: N. Trr Diode (Min.): 44 ns. Collector current: 60A. Ic(pulse): 150A. Ic(T=100°C): 30A. Marking on the case: GW20NC60VD. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 31 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Function: high frequency inverters, UPS. Spec info: Very Fast PowerMESH™ IGBT. CE diode: yes. Germanium diode: no

C(in): 2510pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 35 ns. Production date: 201509. Collector current: 60A. Ic(pulse): 135A. Ic(T=100°C): 30A. Marking on the case: GW30NC120HD. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 275 ns. Td(on): 29 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.75V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 25V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Function: high current capability, High input impedance. Spec info: Very Fast PowerMESH™ IGBT. CE diode: yes. Germanium diode: no

C(in): 4550pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: High frequency operation up to 50KHz. Collector current: 80A. Ic(pulse): 200A. Ic(T=100°C): 50A. Marking on the case: GW40NC60V. Number of terminals: 3. Pd (Power Dissipation, Max): 260W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 43 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Spec info: Very Fast PowerMESH™ IGBT. CE diode: no. Germanium diode: no

C(in): 1350pF. Cost): 175pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: fast power MOSFET transistor. Id(imp): 32A. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: H8NA60FI. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 20 ns. Technology: 'Enhancement mode'. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.75V. Vgs(th) min.: 2.25V. Number of terminals: 3. Quantity per case: 1. Note: Viso 4000V. G-S Protection: no

C(in): 150pF. Cost): 30pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 4A. ID (T=100°C): 630mA. ID (T=25°C): 1A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: 4NF20L. Pd (Power Dissipation, Max): 3.3W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 10.4 ns. Td(on): 2 ns. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Conditioning: roll. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Collector current: 1.5A. Ic(pulse): 3A. Marking on the case: N83003. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Number of terminals: 3. Conditioning unit: 1000. Spec info: complementary transistor (pair) STN93003. BE diode: no. CE diode: no

Cost): 215pF. Conditioning: roll. Semiconductor material: silicon. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Max hFE gain: 350. Minimum hFE gain: 30. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.32V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 1000. BE diode: no. CE diode: no

Conditioning: roll. Max hFE gain: 140. Minimum hFE gain: 50. Collector current: 0.5A. Ic(pulse): 1A. Marking on the case: N9260. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf (type): 150 ns. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: PNP. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 600V. Vebo: 7V. Function: high voltage fast-switching, PNP power transistor. Quantity per case: 1. BE diode: no. CE diode: no

Conditioning: roll. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Collector current: 1.5A. Ic(pulse): 3A. Marking on the case: N93003. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: PNP. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Number of terminals: 3. Conditioning unit: 1000. Spec info: complementary transistor (pair) STN83003. BE diode: no. CE diode: no

C(in): 5955pF. Cost): 244pF. Channel type: N. Trr Diode (Min.): 38 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 400A. ID (T=100°C): 70A. ID (T=25°C): 100A. Idss (max): 100uA. Marking on the case: 100N8F6. Pd (Power Dissipation, Max): 176W. On-resistance Rds On: 0.008 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 103 ns. Td(on): 33 ns. Technology: STripFET™ F6 technology. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 80V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 1370pF. Cost): 156pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 36A. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK60Z. Pd (Power Dissipation, Max): 115W. On-resistance Rds On: 0.75 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 18 ns. Td(on): 55 ns. Technology: Zener-Protected SuperMESH]Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

C(in): 1370pF. Cost): 156pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 36A. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK60ZFP. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.65 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: SuperMESH Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: yes

C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK80Z. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener diode protection. G-S Protection: yes

C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Function: protected with zener diode. Id(imp): 36A. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK80ZFP. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220FP. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P10NK80ZFP. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.9 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 65 ns. Ciss Gate Capacitance [pF]: 2180pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1250pF. Cost): 210pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 42.8A. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 17 ns. Technology: PowerMESH MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Note: Viso 2000VDC. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P11NK40Z. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.55 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 930pF. Maximum dissipation Ptot [W]: 110W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C