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SPP17N80C2

SPP17N80C2
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 5.55$ 5.55$
5 - 9 5.27$ 5.27$
10 - 24 5.00$ 5.00$
25 - 49 4.72$ 4.72$
50 - 99 4.61$ 4.61$
100 - 118 4.33$ 4.33$
Quantity U.P
1 - 4 5.55$ 5.55$
5 - 9 5.27$ 5.27$
10 - 24 5.00$ 5.00$
25 - 49 4.72$ 4.72$
50 - 99 4.61$ 4.61$
100 - 118 4.33$ 4.33$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 118
Set of 1

SPP17N80C2. Channel type: N. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: SPP17N80C2. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.25 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 26/12/2024, 13:25.

Equivalent products :

Quantity in stock : 48
SPP17N80C3

SPP17N80C3

C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min...
SPP17N80C3
C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.25 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
SPP17N80C3
C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.25 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
9.23$ VAT incl.
(9.23$ excl. VAT)
9.23$

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