Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.82$ | 2.82$ |
5 - 9 | 2.68$ | 2.68$ |
10 - 12 | 2.54$ | 2.54$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.82$ | 2.82$ |
5 - 9 | 2.68$ | 2.68$ |
10 - 12 | 2.54$ | 2.54$ |
SPP18P06P. C(in): 230pF. Cost): 95pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: dv/dt rated Enhancement mode. G-S Protection: diode. Id(imp): 74.8A. ID (T=100°C): 13.2A. ID (T=25°C): 18.7A. Idss (max): 10uA. IDss (min): 0.1uA. Marking on the case: 18P06P. Pd (Power Dissipation, Max): 81W. On-resistance Rds On: 0.102 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 12 ns. Technology: SIPMOS Power-Transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.7V. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 26/12/2024, 12:25.
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