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Semiconductors Transistors

SPW11N80C3

SPW11N80C3
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[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 6.69$ 6.69$
2 - 2 6.36$ 6.36$
3 - 4 6.02$ 6.02$
5 - 9 5.69$ 5.69$
Quantity U.P
1 - 1 6.69$ 6.69$
2 - 2 6.36$ 6.36$
3 - 4 6.02$ 6.02$
5 - 9 5.69$ 5.69$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 9
Set of 1

SPW11N80C3. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 156W. On-resistance Rds On: 0.39 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 32
SPP11N80C3

SPP11N80C3

Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. I...
SPP11N80C3
Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. Pd (Power Dissipation, Max): 156W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Function: ID pulse 33A. Quantity per case: 1
SPP11N80C3
Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. Pd (Power Dissipation, Max): 156W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Function: ID pulse 33A. Quantity per case: 1
Set of 1
5.64$ VAT incl.
(5.64$ excl. VAT)
5.64$
Quantity in stock : 324
SPA11N80C3

SPA11N80C3

C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. ...
SPA11N80C3
C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
SPA11N80C3
C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
Set of 1
4.58$ VAT incl.
(4.58$ excl. VAT)
4.58$

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Quantity in stock : 9
SPW11N80C3

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C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. ...
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NCP1203D60R2G

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RFT-6-3A

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Max Continuous current: 6.3A. Fuse properties: time delay fuse (T). Voltage: 250V. Pitch: 5.1mm. D...
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TEA2025B

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FQPF3N80C

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LNK304GN

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