Transistors

C(in): 11pF. Cost): 1.5pF. Semiconductor material: silicon. FT: 50 MHz. Minimum hFE gain: 25. Collector current: 0.5A. Marking on the case: s1D. Pd (Power Dissipation, Max): 0.36W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Function: high voltage amplifier, SMD version of MPSA42. Quantity per case: 1. Note: complementary transistor (pair) SMBTA92. Spec info: screen printing/SMD code S1D. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6A. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

C(in): 8180pF. Cost): 310pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: 'Increased MOSFET dv/dt ruggedness'. Id(imp): 267A. ID (T=100°C): 49A. ID (T=25°C): 77.5A. Idss (max): 10uA. IDss (min): 5uA. Marking on the case: 6R041P6. Number of terminals: 3. Pd (Power Dissipation, Max): 481W. On-resistance Rds On: 0.041 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 29 ns. Technology: CoolMOS ™ P6 Power Transistor. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Drain-source protection : yes. G-S Protection: no

Channel type: N. Marking on the case: TB. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.017...0.025 Ohms

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.059 Ohms / 0.065 Ohms

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.052 Ohms / 0.057 Ohms

Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: SP8M4FU6TB. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.012 Ohms / 0.020 Ohms

C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 31W. On-resistance Rds On: 0.95 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). Spec info: Exceptional dv/dt capability. G-S Protection: no

C(in): 790pF. Cost): 260pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 21.9A. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. IDss (min): 0.5uA. Marking on the case: 07N60C3. Pd (Power Dissipation, Max): 32W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: ITO-220 (PG-TO220FP). Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 07N60C3. Drain-source voltage Uds [V]: 650V. Drain Current Id [A] @ 25°C: 7.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ 4.6A. Gate breakdown voltage Ugs [V]: 3.9V. Switch-on time ton [nsec.]: 6 ns. Switch-off delay tf[nsec.]: 60 ns. Ciss Gate Capacitance [pF]: 790pF. Maximum dissipation Ptot [W]: 32W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1100pF. Cost): 46pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 24A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 20uA. Marking on the case: 08N60C3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.56 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no

C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: insulated case (2500VAC, 1 min). Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 11N65C3. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 0.34 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no

C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 48A. ID (T=100°C): 10A. ID (T=25°C): 16A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 16N50C3. Pd (Power Dissipation, Max): 34W. On-resistance Rds On: 0.25 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 10 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 560V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Function: Exceptional dv/dt capability. Note: Fully isolated package (2500VAC /1 minute). Spec info: capacités effectives ultra faibles. Drain-source protection : yes. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. ID (T=100°C): 28A. ID (T=25°C): 32A. Idss (max): 32A. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 0.028 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. ID (T=25°C): 56A. Idss (max): 56A. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Quantity per case: 1

C(in): 4480pF. Cost): 1580pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 195 ns. Type of transistor: MOSFET. Function: 'Enhancement mode'. Id(imp): 320A. ID (T=25°C): 80A. Idss (max): 1uA. IDss (min): 0.01uA. Marking on the case: 2N04H4. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 46 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 750pF. Cost): 350pF. Channel type: N. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 22.8A. ID (T=100°C): 4.6A. ID (T=25°C): 7.6A. Idss (max): 100uA. IDss (min): 0.5uA. Marking on the case: 08N50C3. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 6 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 560V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60us. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 6.2A. ID (T=25°C): 8.8A. Idss (max): 10uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Spec info: ID pulse 35.2A. G-S Protection: no

C(in): 215pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: dv/dt rated Enhancement mode. Id(imp): 37A. ID (T=100°C): 6.5A. ID (T=25°C): 9.2A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: SPD09N05. Pd (Power Dissipation, Max): 24W. On-resistance Rds On: 0.093 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: SIPMOS Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1

C(in): 790pF. Cost): 390pF. Channel type: N. Trr Diode (Min.): 32 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 112A. ID (T=100°C): 28A. ID (T=25°C): 30A. Idss: 100uA. Idss (max): 100uA. Marking on the case: 28N03L. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.023 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 13 ns. Technology: SIPMOS Power Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.6V. Number of terminals: 2. Quantity per case: 1

C(in): 490pF. Cost): 160pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra Low Gate Charge High Peak Current Capability. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N60C3. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 85m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Spec info: Exceptional dv/dt capability. Drain-source protection : yes. G-S Protection: no

C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N80C3. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 785pF. Cost): 33pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 18A. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. IDss (min): 10uA. Marking on the case: 06N80C3. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 30pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 750 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Production date: 2015/05. Id(imp): 14.6A. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. IDss (min): 0.5uA. Marking on the case: 07N60S5. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 120ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5.5V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. Spec info: COOL MOS TRANSISTOR. G-S Protection: no