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SPP08N80C3

SPP08N80C3
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 3.31$ 3.31$
5 - 9 3.14$ 3.14$
10 - 24 2.98$ 2.98$
25 - 49 2.81$ 2.81$
50 - 54 2.74$ 2.74$
Quantity U.P
1 - 4 3.31$ 3.31$
5 - 9 3.14$ 3.14$
10 - 24 2.98$ 2.98$
25 - 49 2.81$ 2.81$
50 - 54 2.74$ 2.74$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 54
Set of 1

SPP08N80C3. C(in): 1100pF. Cost): 46pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 24A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 20uA. Marking on the case: 08N60C3. Pd (Power Dissipation, Max): 104W. On-resistance Rds On: 0.56 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.

Equivalent products :

Quantity in stock : 32
SPP11N80C3

SPP11N80C3

Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. I...
SPP11N80C3
Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. Pd (Power Dissipation, Max): 156W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Function: ID pulse 33A. Quantity per case: 1
SPP11N80C3
Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. Pd (Power Dissipation, Max): 156W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Function: ID pulse 33A. Quantity per case: 1
Set of 1
5.64$ VAT incl.
(5.64$ excl. VAT)
5.64$
Quantity in stock : 77
FQP9N90C

FQP9N90C

Channel type: N. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Id...
FQP9N90C
Channel type: N. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. Pd (Power Dissipation, Max): 205W. On-resistance Rds On: 1.12 Ohms. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Quantity per case: 1. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF
FQP9N90C
Channel type: N. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. Pd (Power Dissipation, Max): 205W. On-resistance Rds On: 1.12 Ohms. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Quantity per case: 1. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF
Set of 1
6.14$ VAT incl.
(6.14$ excl. VAT)
6.14$

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