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SPP11N60C3

SPP11N60C3
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Quantity excl. VAT VAT incl.
1 - 4 4.20$ 4.20$
5 - 9 3.99$ 3.99$
10 - 24 3.78$ 3.78$
25 - 49 3.57$ 3.57$
50 - 99 3.48$ 3.48$
100 - 249 3.40$ 3.40$
250+ 3.27$ 3.27$
Quantity U.P
1 - 4 4.20$ 4.20$
5 - 9 3.99$ 3.99$
10 - 24 3.78$ 3.78$
25 - 49 3.57$ 3.57$
50 - 99 3.48$ 3.48$
100 - 249 3.40$ 3.40$
250+ 3.27$ 3.27$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

SPP11N60C3. C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 11N60C3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.34 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool Mos POWER trafnsistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.

Equivalent products :

Quantity in stock : 14
FCP11N60

FCP11N60

C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type o...
FCP11N60
C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.32 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
FCP11N60
C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.32 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
Set of 1
4.02$ VAT incl.
(4.02$ excl. VAT)
4.02$

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