Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.35$ | 0.35$ |
10 - 24 | 0.33$ | 0.33$ |
25 - 49 | 0.31$ | 0.31$ |
50 - 99 | 0.30$ | 0.30$ |
100 - 213 | 0.29$ | 0.29$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.35$ | 0.35$ |
10 - 24 | 0.33$ | 0.33$ |
25 - 49 | 0.31$ | 0.31$ |
50 - 99 | 0.30$ | 0.30$ |
100 - 213 | 0.29$ | 0.29$ |
SS8050CTA. Cost): 9pF. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 200. Minimum hFE gain: 120. Collector current: 1.5A. Marking on the case: S8050 C. Pd (Power Dissipation, Max): 1W. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo-Pack). Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 25V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 12:25.
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