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Electronic components and equipment, for businesses and individuals

Product categories :

Semiconductors Transistors

SPP11N60S5

Quantity	excl. VAT	VAT incl.
1 - 4	5.06$	5.06$
5 - 9	4.81$	4.81$
10 - 24	4.56$	4.56$
25 - 49	4.30$	4.30$
50 - 53	4.20$	4.20$

Quantity	U.P
1 - 4	5.06$	5.06$
5 - 9	4.81$	4.81$
10 - 24	4.56$	4.56$
25 - 49	4.30$	4.30$
50 - 53	4.20$	4.20$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 53

Set of 1

SPP11N60S5. C(in): 1460pF. Cost): 610pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 650ms. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 22A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: 11N60S5. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.34 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 130 ns. Technology: Cool Mos POWER transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.

Technical documentation

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Quantity in stock : 2

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