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Semiconductors Transistors

SPP17N80C3

SPP17N80C3
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 9.23$ 9.23$
2 - 2 8.77$ 8.77$
3 - 4 8.31$ 8.31$
5 - 9 7.84$ 7.84$
10 - 19 7.66$ 7.66$
20 - 29 7.47$ 7.47$
30 - 48 7.20$ 7.20$
Quantity U.P
1 - 1 9.23$ 9.23$
2 - 2 8.77$ 8.77$
3 - 4 8.31$ 8.31$
5 - 9 7.84$ 7.84$
10 - 19 7.66$ 7.66$
20 - 29 7.47$ 7.47$
30 - 48 7.20$ 7.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 48
Set of 1

SPP17N80C3. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.25 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 51
SPW17N80C3

SPW17N80C3

C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET....
SPW17N80C3
C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
SPW17N80C3
C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
8.33$ VAT incl.
(8.33$ excl. VAT)
8.33$

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