SPP20N60C3

SPP20N60C3. C(in): 2400pF. Cost): 780pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 62.1A. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 20N60C3. Pd (Power Dissipation, Max): 208W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 06:25.