Transistors

C(in): 1750pF. Cost): 190pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 440 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 36A. ID (T=100°C): 3.2A. ID (T=25°C): 5.1A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 20 ns. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1150pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 415 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 28A. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 1.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 18 ns. Technology: Power-MOSFET (F). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P1. Drain-source voltage Uds [V]: 40V. Drain current Idss [A] @ Ug=0V: 1mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -1.5V @ +15V. Maximum dissipation Ptot [W]: 0.35W. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Collector current: 4A. Ic(pulse): 8A. Marking on the case: 13005A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no

Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. BE diode: no. CE diode: yes

BE resistor: 50. Semiconductor material: silicon. Collector current: 12A. Marking on the case: ST13009L. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 700V. Collector/emitter voltage Vceo: 400V. Function: hFE 15...28. Quantity per case: 1. Spec info: ST13009L. BE diode: no. CE diode: yes

Cost): 122pF. Quantity per case: 1. BE diode: no. CE diode: no

C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 120N4F6. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: Switching applications, Automotive. G-S Protection: no

Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: Medium Power Amplifier. Max hFE gain: 390. Minimum hFE gain: 82. Collector current: 2A. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 30 v. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: complementary transistor (pair) STD1862

C(in): 940pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.8A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: B12NM50N. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 15 ns. Technology: MDmesh Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no

C(in): 850pF. Cost): 48pF. Channel type: N. Trr Diode (Min.): 122 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: B12NM50ND. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 12 ns. Technology: FDmesh™ II Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. Gate/source voltage Vgs: 25V. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Spec info: FDmesh™ II Power MOSFET (with fast diode). Drain-source protection : yes. G-S Protection: no

C(in): 470pF. Cost): 70pF. Channel type: N. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 52A. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: D10NF10. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.115 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 16 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 340pF. Cost): 40pF. Channel type: P. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 40A. ID (T=100°C): 7.2A. ID (T=25°C): 10A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 10P6F6. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.13 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 64 ns. Td(on): 14 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 790pF. Cost): 70pF. Channel type: N. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 13NM60N. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. IDss (min): 1uA. Marking on the case: D3NK80Z. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 3.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 75. G-S Protection: yes

C(in): 485pF. Cost): 57pF. Channel type: N. Conditioning: roll. Drain-source protection : Zener diode. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50mA. IDss (min): 1uA. Marking on the case: D3NK80Z. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 3.8 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2000. G-S Protection: yes

C(in): 310pF. Cost): 49pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 12A. ID (T=100°C): 1.9A. ID (T=25°C): 3A. Idss: 1uA. Idss (max): 3A. Marking on the case: D4NK50Z. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 2.3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 10 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 500V. Quantity per case: 1. G-S Protection: yes

C(in): 510pF. Cost): 47pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 16A. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss: 1uA. Idss (max): 4A. Marking on the case: D4NK60Z. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 1.76 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 12 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 600V. Quantity per case: 1. G-S Protection: yes

C(in): 545pF. Cost): 45pF. Channel type: N. Number of channels: 1. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Id(imp): 17.6A. ID (T=100°C): 2.77A. ID (T=25°C): 4.4A. Idss (max): 50uA. IDss (min): 5uA. Marking on the case: 5N52K3. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 1.2 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 9 ns. Technology: SuperMESH3™ Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Operating temperature: -55...+150°C. Voltage Vds(max): 525V. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Function: Switching applications, Gate charge minimized, Low IDSS. Spec info: Enhancement type. Drain-source protection : yes. G-S Protection: yes

C(in): 529pF. Cost): 71pF. Channel type: N. Number of channels: 1. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 17.6A. ID (T=100°C): 2.8A. ID (T=25°C): 4.4A. Idss (max): 500uA. IDss (min): 10uA. Marking on the case: 5N52U. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 1.25 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23.1 ns. Td(on): 11.4 ns. Technology: UltraFASTmesh™ Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Operating temperature: -55...+150°C. Voltage Vds(max): 525V. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Function: Switching applications, Gate charge minimized. Spec info: Enhancement type. Drain-source protection : yes. G-S Protection: yes

Cost): 24.6pF. Channel type: N. Trr Diode (Min.): 213 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 20A. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 7NM60N. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.84 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 7 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. C(in): 363pF. Drain-source protection : yes. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: SMPS POWER MOSFET. Id(imp): 212A. ID (T=100°C): 33A. ID (T=25°C): 53A. Idss (max): 53A. Pd (Power Dissipation, Max): 460W. On-resistance Rds On: 0.07 Ohms. Assembly/installation: PCB through-hole mounting. Electrical insulation: 2500V (AC-RMS). Td(on): 46 ns. Technology: PowerMesh II MOSFET. Tf (type): 38 ns. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). Tr: 70 ns. Operating temperature: -65...150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: ±30V. Quantity per case: 1. Drain-source protection : yes

C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.37 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no

C(in): 870pF. Cost): 50pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 48A. ID (T=100°C): 7.6A. ID (T=25°C): 12A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: 13N80K5. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.37 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 16 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes