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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V - SPP20N60S5

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V - SPP20N60S5
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Quantity excl. VAT VAT incl.
1 - 1 7.74$ 7.74$
2 - 2 7.35$ 7.35$
3 - 4 6.96$ 6.96$
5 - 9 6.58$ 6.58$
10 - 14 6.42$ 6.42$
15 - 19 6.27$ 6.27$
20 - 102 6.03$ 6.03$
Quantity U.P
1 - 1 7.74$ 7.74$
2 - 2 7.35$ 7.35$
3 - 4 6.96$ 6.96$
5 - 9 6.58$ 6.58$
10 - 14 6.42$ 6.42$
15 - 19 6.27$ 6.27$
20 - 102 6.03$ 6.03$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 102
Set of 1

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V - SPP20N60S5. N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. C(in): 3000pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 40A. IDss (min): 0.5uA. Marking on the case: 20N60S5. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 120ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 4.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 63
SPP20N60C3

SPP20N60C3

N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1...
SPP20N60C3
N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: no
SPP20N60C3
N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: no
Set of 1
7.19$ VAT incl.
(7.19$ excl. VAT)
7.19$

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