SSS10N60A

Quantity	excl. VAT	VAT incl.
1 - 4	1.80$	1.80$
5 - 9	1.71$	1.71$
10 - 24	1.62$	1.62$
25 - 49	1.53$	1.53$
50 - 99	1.50$	1.50$
100 - 249	1.46$	1.46$
250+	1.39$	1.39$

Quantity	U.P
1 - 4	1.80$	1.80$
5 - 9	1.71$	1.71$
10 - 24	1.62$	1.62$
25 - 49	1.53$	1.53$
50 - 99	1.50$	1.50$
100 - 249	1.46$	1.46$
250+	1.39$	1.39$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

SSS10N60A. C(in): 1750pF. Cost): 190pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 440 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 36A. ID (T=100°C): 3.2A. ID (T=25°C): 5.1A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 20 ns. Technology: Advanced Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!