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Semiconductors Transistors

ST13007A

ST13007A
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.40$ 2.40$
5 - 9 2.28$ 2.28$
10 - 18 2.16$ 2.16$
Quantity U.P
1 - 4 2.40$ 2.40$
5 - 9 2.28$ 2.28$
10 - 18 2.16$ 2.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 18
Set of 1

ST13007A. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. BE diode: no. CE diode: yes. Quantity in stock updated on 25/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 191
MJE13007

MJE13007

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching ...
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.83$ VAT incl.
(1.83$ excl. VAT)
1.83$

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1N4007

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VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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MJE13007-CDIL

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CEL100UF450V

CEL100UF450V

DC voltage: 450V. Capacitance: 100uF. Diameter: 25mm. Lifespan: 2000 hours. Lenght: 30mm. Configurat...
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ST13007A

ST13007A

Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30....
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BUL38D

BUL38D

Semiconductor material: silicon. Function: SMPS S-L. Collector current: 5A. Ic(pulse): 10A. Temperat...
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B1000D

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Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
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B1000S1500

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1N4004

1N4004

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
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IRFP3206

IRFP3206

C(in): 6540pF. Cost): 720pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 33 ns. Type of...
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FJP13007

FJP13007

Cost): 110pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max...
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