STB120N4F6

Quantity	excl. VAT	VAT incl.
1 - 4	2.95$	2.95$
5 - 9	2.80$	2.80$
10 - 24	2.65$	2.65$
25 - 49	2.50$	2.50$
50 - 99	2.44$	2.44$
100 - 249	2.23$	2.23$
250 - 293	2.12$	2.12$

Quantity	U.P
1 - 4	2.95$	2.95$
5 - 9	2.80$	2.80$
10 - 24	2.65$	2.65$
25 - 49	2.50$	2.50$
50 - 99	2.44$	2.44$
100 - 249	2.23$	2.23$
250 - 293	2.12$	2.12$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 293

Set of 1

STB120N4F6. C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 120N4F6. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: Switching applications, Automotive. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!