STB12NM50ND

Quantity	excl. VAT	VAT incl.
1 - 4	4.91$	4.91$
5 - 9	4.66$	4.66$
10 - 24	4.42$	4.42$
25 - 49	4.17$	4.17$
50 - 80	4.07$	4.07$

Quantity	U.P
1 - 4	4.91$	4.91$
5 - 9	4.66$	4.66$
10 - 24	4.42$	4.42$
25 - 49	4.17$	4.17$
50 - 80	4.07$	4.07$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 80

Set of 1

STB12NM50ND. C(in): 850pF. Cost): 48pF. Channel type: N. Trr Diode (Min.): 122 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.9A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: B12NM50ND. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 12 ns. Technology: FDmesh™ II Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. Gate/source voltage Vgs: 25V. Vgs(th) min.: 3V. Number of terminals: 2. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Spec info: FDmesh™ II Power MOSFET (with fast diode). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!