STD5N52K3

Quantity	excl. VAT	VAT incl.
1 - 4	1.13$	1.13$
5 - 9	1.07$	1.07$
10 - 24	1.01$	1.01$
25 - 49	0.96$	0.96$
50 - 50	0.94$	0.94$

Quantity	U.P
1 - 4	1.13$	1.13$
5 - 9	1.07$	1.07$
10 - 24	1.01$	1.01$
25 - 49	0.96$	0.96$
50 - 50	0.94$	0.94$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 50

Set of 1

STD5N52K3. C(in): 545pF. Cost): 45pF. Channel type: N. Number of channels: 1. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Id(imp): 17.6A. ID (T=100°C): 2.77A. ID (T=25°C): 4.4A. Idss (max): 50uA. IDss (min): 5uA. Marking on the case: 5N52K3. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 1.2 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 29 ns. Td(on): 9 ns. Technology: SuperMESH3™ Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Operating temperature: -55...+150°C. Voltage Vds(max): 525V. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Function: Switching applications, Gate charge minimized, Low IDSS. Spec info: Enhancement type. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 26/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!