STB12NM50N

Quantity	excl. VAT	VAT incl.
1 - 4	5.18$	5.18$
5 - 9	4.92$	4.92$
10 - 24	4.67$	4.67$
25 - 49	4.41$	4.41$
50 - 99	4.30$	4.30$
100+	4.04$	4.04$

Quantity	U.P
1 - 4	5.18$	5.18$
5 - 9	4.92$	4.92$
10 - 24	4.67$	4.67$
25 - 49	4.41$	4.41$
50 - 99	4.30$	4.30$
100+	4.04$	4.04$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

STB12NM50N. C(in): 940pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 340 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 6.8A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: B12NM50N. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 0.29 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 60 ns. Td(on): 15 ns. Technology: MDmesh Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 550V. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 80

STB12NM50ND

C(in): 850pF. Cost): 48pF. Channel type: N. Trr Diode (Min.): 122 ns. Type of transistor: MOSFET. Id...

Set of 1

4.91$ VAT incl.
(4.91$ excl. VAT)

4.91$

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