SSS7N60A

SSS7N60A. C(in): 1150pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 415 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 28A. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 1.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 18 ns. Technology: Power-MOSFET (F). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 24/12/2024, 13:25.