Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 12.20$ | 12.20$ |
2 - 2 | 11.59$ | 11.59$ |
3 - 4 | 10.98$ | 10.98$ |
5 - 9 | 10.37$ | 10.37$ |
10 - 14 | 10.13$ | 10.13$ |
15 - 19 | 9.88$ | 9.88$ |
20 - 31 | 9.52$ | 9.52$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 12.20$ | 12.20$ |
2 - 2 | 11.59$ | 11.59$ |
3 - 4 | 10.98$ | 10.98$ |
5 - 9 | 10.37$ | 10.37$ |
10 - 14 | 10.13$ | 10.13$ |
15 - 19 | 9.88$ | 9.88$ |
20 - 31 | 9.52$ | 9.52$ |
STD5N52U. C(in): 529pF. Cost): 71pF. Channel type: N. Number of channels: 1. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 17.6A. ID (T=100°C): 2.8A. ID (T=25°C): 4.4A. Idss (max): 500uA. IDss (min): 10uA. Marking on the case: 5N52U. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 1.25 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23.1 ns. Td(on): 11.4 ns. Technology: UltraFASTmesh™ Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252-3. Operating temperature: -55...+150°C. Voltage Vds(max): 525V. Gate/source voltage Vgs: 30V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Function: Switching applications, Gate charge minimized. Spec info: Enhancement type. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 26/12/2024, 01:25.
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