Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.07$ | 1.07$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 49 | 0.96$ | 0.96$ |
50 - 99 | 0.93$ | 0.93$ |
100 - 114 | 0.84$ | 0.84$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.12$ | 1.12$ |
5 - 9 | 1.07$ | 1.07$ |
10 - 24 | 1.01$ | 1.01$ |
25 - 49 | 0.96$ | 0.96$ |
50 - 99 | 0.93$ | 0.93$ |
100 - 114 | 0.84$ | 0.84$ |
STD10NF10. C(in): 470pF. Cost): 70pF. Channel type: N. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 52A. ID (T=100°C): 9A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: D10NF10. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.115 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 16 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.
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