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Semiconductors Transistors

ST13005A

ST13005A
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.14$ 1.14$
5 - 9 1.08$ 1.08$
10 - 24 1.02$ 1.02$
25 - 26 0.97$ 0.97$
Quantity U.P
1 - 4 1.14$ 1.14$
5 - 9 1.08$ 1.08$
10 - 24 1.02$ 1.02$
25 - 26 0.97$ 0.97$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 26
Set of 1

ST13005A. Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Collector current: 4A. Ic(pulse): 8A. Marking on the case: 13005A. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. Quantity in stock updated on 24/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 18
ST13007A

ST13007A

Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30....
ST13007A
Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. BE diode: no. CE diode: yes
ST13007A
Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Collector current: 8A. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Quantity per case: 1. BE diode: no. CE diode: yes
Set of 1
2.40$ VAT incl.
(2.40$ excl. VAT)
2.40$
Quantity in stock : 191
MJE13007

MJE13007

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching ...
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
MJE13007
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Collector current: 8A. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 9V. Spec info: High Speed ​​Switching. BE diode: no. CE diode: no
Set of 1
1.83$ VAT incl.
(1.83$ excl. VAT)
1.83$
Quantity in stock : 3
MJE13005

MJE13005

Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Collect...
MJE13005
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Collector current: 4A. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no
MJE13005
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Collector current: 4A. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 700V. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$

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