Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.48$ | 1.48$ |
5 - 9 | 1.40$ | 1.40$ |
10 - 24 | 1.33$ | 1.33$ |
25 - 49 | 1.26$ | 1.26$ |
50 - 99 | 1.23$ | 1.23$ |
100 - 119 | 1.11$ | 1.11$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.48$ | 1.48$ |
5 - 9 | 1.40$ | 1.40$ |
10 - 24 | 1.33$ | 1.33$ |
25 - 49 | 1.26$ | 1.26$ |
50 - 99 | 1.23$ | 1.23$ |
100 - 119 | 1.11$ | 1.11$ |
STD7NM60N. Cost): 24.6pF. Channel type: N. Trr Diode (Min.): 213 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 20A. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 7NM60N. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.84 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 7 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. C(in): 363pF. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.