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Electronic components and equipment, for businesses and individuals

Product categories :

Semiconductors Transistors

STD10NM60N

Quantity	excl. VAT	VAT incl.
1 - 4	2.33$	2.33$
5 - 9	2.21$	2.21$
10 - 24	2.09$	2.09$
25 - 49	1.98$	1.98$
50 - 66	1.93$	1.93$

Quantity	U.P
1 - 4	2.33$	2.33$
5 - 9	2.21$	2.21$
10 - 24	2.09$	2.09$
25 - 49	1.98$	1.98$
50 - 66	1.93$	1.93$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 66

Set of 1

STD10NM60N. C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

Technical documentation

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