Transistors

Cost): 92pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 260 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 8A. ID (T=100°C): 1.6A. ID (T=25°C): 2.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 33 ns. Td(on): 8 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. C(in): 360pF. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF820PBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 33 ns. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Ciss Gate Capacitance [pF]: 360pF

C(in): 610pF. Cost): 160pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 18A. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 620 ns. Cost): 93 ns. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 20A. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. IDss (min): 25uA. Temperature: +105°C. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 1.4 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF830PBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 4.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ 2.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.2 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 610pF. Maximum dissipation Ptot [W]: 75W. Housing (JEDEC standard): 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1300pF. Cost): 310pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 4.8A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 1018pF. Cost): 155pF. Channel type: N. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF840APBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1018pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1018pF. Cost): 155pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 422 ns. Type of transistor: MOSFET. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.85 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF840ASPBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 11 ns. Switch-off delay tf[nsec.]: 26 ns. Ciss Gate Capacitance [pF]: 1018pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Manufacturer's marking: IRF840PBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 8A. Power: 125W. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Drain-source voltage (Vds): 500V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: IRF840SPBF. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.85 Ohms @ 4.8A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 49 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 760pF. Cost): 170pF. Channel type: N. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. Id(imp): 88A. ID (T=100°C): 9.1A. ID (T=25°C): 11A. Idss (max): 150uA. IDss (min): 1uA. Marking on the case: IRF8707G. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.142 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 7.3 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -50...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 4.5V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F8736. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0048 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 13 ns. Ciss Gate Capacitance [pF]: 2315pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F8788. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 24A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0028 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 2.35V. Switch-on time ton [nsec.]: 23 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 5720pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1200pF. Cost): 570pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 270ms. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss: 25uA. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 50M Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 38 ns. Technology: V-MOS. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Spec info: HEXFET. G-S Protection: no

Channel type: P. Type of transistor: MOSFET. Function: laptop switching circuits. Id(imp): 160A. ID (T=100°C): 7.1A. ID (T=25°C): 20A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.039 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 65 ns. Td(on): 25 ns. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.4V. Vgs(th) min.: 1.3V. Quantity per case: 1. Technology: HEXFET Power MOSFET transistor. Drain-source protection : no. G-S Protection: yes

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9510PBF. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ -2.4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 200pF. Maximum dissipation Ptot [W]: 43W. Td(on): 10 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1

C(in): 390pF. Cost): 170pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 98 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 27A. ID (T=100°C): 4.8A. ID (T=25°C): 6.8A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 9.6 ns. Technology: HEXFET Power-MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 350pF. Cost): 110pF. Channel type: P. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 27A. ID (T=100°C): 4.1A. ID (T=25°C): 6.8A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.48 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9520. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 28 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 48W. Housing (JEDEC standard): 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: no. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F9520. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 28 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9520PBF. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -6.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.48 Ohms @ -4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 9.6 ns. Switch-off delay tf[nsec.]: 21 ns. Ciss Gate Capacitance [pF]: 390pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.2A. ID (T=25°C): 12A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 760pF. Cost): 260pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no