Transistors

Housing: TO-220AB. Manufacturer's marking: IRF9530. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ -8.4A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 760pF. Maximum dissipation Ptot [W]: 79W. Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 14A. Power: 75W. On-resistance Rds On: 0.4 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): -100V

C(in): 1400pF. Cost): 590pF. Channel type: P. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 72A. ID (T=100°C): 13A. ID (T=25°C): 19A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.20 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 34 ns. Td(on): 16 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 1300pF. Cost): 400pF. Channel type: P. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 76A. ID (T=100°C): 16A. ID (T=25°C): 23A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.117 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 51 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 23A. Power: 125W. On-resistance Rds On: 0.117 Ohms. Drain-source voltage (Vds): -100V. Housing: TO-220AB <.45/32nsec

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9540. Drain-source voltage Uds [V]: -100V. Drain Current Id [A] @ 25°C: -23A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.117 Ohms @ -11A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 1300pF. Maximum dissipation Ptot [W]: 140W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 170pF. Cost): 50pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 7A. ID (T=100°C): 1A. ID (T=25°C): 1.8A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 20W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9610PBF. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -1.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 3 Ohms @ -0.9A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 170pF. Maximum dissipation Ptot [W]: 20W. Housing (JEDEC standard): 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 350pF. Cost): 100pF. Channel type: P. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 14A. ID (T=100°C): 2A. ID (T=25°C): 3.5A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1.5 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: High-speed switching. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9620PBF. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -3.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.5 Ohms @ -1.5A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 350pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: P. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. ID (T=100°C): 1.5A. ID (T=25°C): 3A. Idss (max): 3A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 2.4 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Quantity per case: 1

C(in): 700pF. Cost): 200pF. Channel type: P. Conditioning: plastic tube. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26A. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no

Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 6.5A. Power: 75W. On-resistance Rds On: 0.8 Ohms. Housing: TO-220AB. Drain-source voltage (Vds): -200V

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRF9630PBF. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -6.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.8 Ohms @ -3.9A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 28 ns. Ciss Gate Capacitance [pF]: 700pF. Maximum dissipation Ptot [W]: 74W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1200pF. Cost): 370pF. Channel type: P. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 44A. ID (T=100°C): 6.6A. ID (T=25°C): 11A. Idss (max): 500uA. IDss (min): 100uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Power: 125W. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Housing: TO-220AB. Manufacturer's marking: IRF9640PBF. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 125W. Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 11A. Power: 125W. On-resistance Rds On: 0.5 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Drain-source voltage (Vds): -200V

RoHS: no. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F9640S. Drain-source voltage Uds [V]: -200V. Drain Current Id [A] @ 25°C: -11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ -6.6A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 14 ns. Switch-off delay tf[nsec.]: 39 ns. Ciss Gate Capacitance [pF]: 1200pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9952. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.5A/-2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms/025 Ohms @ 2.2/-1A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns/19 ns. Switch-off delay tf[nsec.]: 26/40 ns. Ciss Gate Capacitance [pF]: 190/190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9952Q. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 3.5A/-2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms/0.4 Ohms @ 1/-0.5A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 12 ns/19 ns. Switch-off delay tf[nsec.]: 26/40 ns. Ciss Gate Capacitance [pF]: 190/190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: F9953. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -2.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ -1A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 9.7 ns. Switch-off delay tf[nsec.]: 20 ns. Ciss Gate Capacitance [pF]: 190pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 350pF. Cost): 170pF. Channel type: P. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 48A. ID (T=100°C): 8.5A. ID (T=25°C): 12A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 620pF. Cost): 280pF. Channel type: P. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 68A. ID (T=100°C): 14A. ID (T=25°C): 19A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Housing: TO-220AB. Manufacturer's marking: IRF9Z34NPBF. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -19A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ -10A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 620pF. Maximum dissipation Ptot [W]: 68W. Type of transistor: MOSFET power transistor. Channel type: P. Max drain current: 17A. Power: 56W. On-resistance Rds On: 0.10 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): -55V

C(in): 620pF. Cost): 280pF. Channel type: P. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 68A. ID (T=100°C): 14A. ID (T=25°C): 19A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F9Z34NS. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -19A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ -10A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 620pF. Maximum dissipation Ptot [W]: 68W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 1423pF. Cost): 208pF. Channel type: N. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.52 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 14 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 52nC. Spec info: N-Ch MOSFET, VBRDSS 500V. Drain-source protection : yes. G-S Protection: no